In this work we represent a first systematic investigation of the basic growth behaviour of 3C-SiC performed under Lely growth conditions. We examine the formation of the different polytypes and their crystallographic appearance in the temperature range 1700-2400 degreesC. The growth habits have been deduced from transmission electron microscopy, photoluminescence (RT) and cathodoluminescence, micro-Raman spectroscopy and, finally, selected area channelling pattern. It was found that 3C-SiC is dominant up to a measured temperature of 2100 degreesC. At higher temperatures the portion of 15R-SiC increases steadily.