The growth of cubic 3C-SiC single crystals by the modified Lely method is reported. Free-standing 200mum thick 3C-SiC epilayers were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500degreesC. The temperature of the seed crystal was kept in the range of (18501950)degreesC. The growth rate is equal to 0.05mm/h and a nitrogen donor concentration of (2-6) x10(18) cm(-3) is determined in the grown 3C-SiC.