We have studied the homoepitaxial growth of SiC by CVD on trenched 8degrees off-axis 4H-SiC (0001) substrates formed by reactive ion etching (RIE). The influences of C/Si ratio and trench direction on the growth have been investigated. Growth near the trenches perpendicular to the off-direction tended to be highly asymmetric due to the influence of step-flow growth, and the (0001) facet was formed at the downstream sides of off-direction. In contrast, growth near the trenches parallel to the off-direction was symmetric. Although the growth rate on the trench sidewall is usually lower than that on the bottom of the trench and top surface, this difference in the epilayer thickness becomes smaller with decreasing C/Si ratio during growth.