Thick (>20 mum) 4H-SiC layers in doping range of low 10(15)-10(16) cm(-1) were grown by sublimation epitaxy at a growth rate of similar to50 mum/hour. Two inch 25 mum thick layers were fabricated with standard thickness deviation of 3.77%. Effect of important process parameters on the material grade has been discussed. The Schottky diodes processed on this material sustained 900V reverse voltage at a current of 1.7 x 10(-8) A, while measured on MOS capacitors the interface state density was as low as similar to6-9 x 10(10) cm(-2).