In this paper, we talk about Al doped 4H-SiC epitaxial films grown on 80 off-axis (0001) 4H-SiC substrate by cold-wall horizontal CVD system. In order to lower the deposition temperature, we use the novel organo-silicon precursor material, bis-trimethylsilylmethane (BTMSM, C7H20Si2). For the p-type doping, TEA (triethylaluminum (C2H5)(3)Al) was used as Al source. For the control of Si/C ratio, CH4 gas was also added. The n-type and p-type substrates having the size of 6x6 mm were used for C-V measurement, Hall effects measurement, and X-ray diffraction analysis. X-ray diffraction analysis showed that degradation of the crystal quality of SiC epilayer was relatively small despite increasing Al doping contents. In addition, the crystal quality of SiC epilayer was improved in case of adding small amount of Al contents. The similar tendency was observed in the RMS roughness variation of epilayer. A doping concentration of the most heavily doped SiC epilayer was approximately 10(18) cm(-3).