CVD of 3C-SiC on (211), (100) and (I 11) Si substrates was carried out with the source gases of HCDS and C3H8. The C/Si ratio for single crystal growth was established for each substrate orientation. Crystallographic orientation between 3C-SiC and Si on (211), (100) and (111) substrates respectively was identical. Surface morphology of as-grown (211) 3C-SiC exhibited step-bunching, which suggests that the step-flow growth is dominating. (100) and (I 11) nano-facets were generated alternately on (211) substrates, which is named as "nano-undulation" structure. It is a self-arranged structure, and it enabled the crystals to grow in step-flow growth on (211) substrates. Stacking faults on (211) substrates canceled more effectively than that on (100) and/or (I 11) substrates, which is also due to the nano-undulation structure on (211) substrates. It is suggested that CVD growth on (211) substrates with vicinal off-angles toward [0 11,] or [0 1, 1] is effective to reduce stacking fault density.