This paper reports the development of a high-throughput, LPCVD reactor and processes for depositing low residual stress, low stress gradient poly-SiC on large area substrates. The system consists of a resistively-heated, horizontal LPCVD furnace capable of holding up to 100, 150 mm-diameter substrates. Poly-SiC depositions were performed using a SiH2Cl2 flow rate of 54 seem and a C2H2 flow rate of 180 seem (5% in H-2) at temperatures from 800 to 900degreesC and pressures from 0.46 to 5 Torr. Stoichiometric poly-SiC films were deposited over this entire range. The poly-SiC films exhibited a strong (I 11) 3C-SiC, polycrystalline texture regardless of temperature and pressure. The surface roughness ranged from 5.6 nm for a film grown at 800degreesC and 0.46 Torr to 12.6 ran for a film deposited at 900degreesC and 2.5 Torr. Films having a thickness of up to 1.5 mum were uniform, with a 5% variation across both the wafers and the boat. Single-layer mechanical properties test structures were fabricated from 500 to 600 nm-thick films and successfully released using a Si etchant. The residual stresses in these films exhibit a strong dependence on deposition pressure, ranging from roughly 700 MPa at 0.46 Torr to -100 MPa at pressures above 3.5 Torr.