We report on 3 pin thick 3C-SiC films re-grown on 35 nm thin 3C-SiC layers on Si annealed by a flash lamp process (FLP). Firstly a 35 nm thick 3C-SiC film is deposited on a <100>Si substrate which is followed, secondly, by FLP. This leads to a fast melting (within 20 msec) of the Si-SiC interface region followed by epitaxial solidification. Then, in a third step, this film is used as a seed for the deposition of a second 3 mum thick 3C-SiC layer. This newly developed process including FLP is called FLASiC (Flash Lamp Annealed SIlicon Carbide). Compared with standard 3 mum thick layers directly grown on silicon, both transmission electron microscopy and low temperature photoluminescence evidence improvement of the re-grown material.