Deformation tests were conducted on single crystal 4H-SiC with an orientation favorable for activation of one of the three {1 (1) over bar 00}(1)/(3)<11 (2) over bar0> prism slip systems, and unfavorable for the activation of the (0001)(1)/(3)< 11 (2) over bar0 > primary slip system. The sample deformed under compression at a temperature of 1235degreesC and at strain rate of similar to2.2x10(-5) s(-1). Subsequent to the test, the microstructure of the deformed crystal was investigated by optical and transmission electron microscopy. The compression resulted in heavy kinking of the sample with profuse basal slip traces in the kink region. The activation of basal slip dislocations, while the primary slip system was suppressed and the secondary prism slip system was activated, is discussed