In this paper, we present the use of Electron Back Scattering Diffraction (EBSD) as a tool for the investigation and monitoring of 3C-SiC (beta) nucleation and growth on 6H- or 4H-SiC (alpha) (0001) nominal surfaces. Experiments were performed under silicon rich gas phase, for temperatures varying from 1900 to 2100 degreesC and different supersaturations. For each condition, phase and orientation maps are imaged from the EBSD technique. Results are presented in terms of alpha-SiC/beta-SiC ratios and beta(1)/beta(2) ratios where beta(1) and beta(2) are related to the two possible orientations for the 3C-SiC to epitaxially grow on the 4H-SiC (0001) nominal surface. We demonstrate that, depending on the experimental conditions, it is possible to control first the formation of 3C rather than 4H-SiC and to control a 3C orientation rather than the other and thus to limit the DPB density.