Materials Science Forum, Vol.457-460, 661-664, 2004
Specificity of electron impact ionization in superstructure silicon carbide
New direct observations of impact ionization electron component are presented. For the first time it was used a triode bipolar N+-pi-N+ structure which allowed to obtain electron current without hole component. The monotonous dependence of the electron pulse current on direct field in collector from 1000 to 2200kV/cm. said about absence some electron multiplication. The next evidences of the absence electron multiplication were obtained by direct observations phototomultiplication in diode P+-N-P+ structure at sufficient advantage an electron initial current in comparison hole one. This investigation showed too that electron heating was depressed by a field induced localisation. process to the fields equalled to 0.9 value of the breakdown fields
Keywords:silicon carbide;impact ionisation;natural superlattice;miniband;Bragg reflection;electrical field;Wannier-Stark localization;field induced localisation