Capacitance-voltage measurements on n-type 4H-SiC with HF-based electrolytic solutions as Schottky barrier have been performed. The electrolytic solutions permit the etching of the n-type SiC material under anodic currents and UV light illumination. Etch rates as high as 5 mum/hr were achieved in the frame of the present study. In most cases, the value of the anodic photocurrents density saturates at 0.3-0.6 mA/cm(2) after long enough etching due to the formation of a SiC porous layer. The latter was also formed when using KOH- and NH4HF2-based electrolytes. Nevertheless, the interface between the 4H-SiC layer containing pores and the electrolytes still behave as a Schottky junction. Therefore, the doping concentration depth profile was accurately determined despite the formation of the porous layer after long etching.