In this paper we report bulk SiC doping with phosphorous by the modified physical vapor transport (M-PVT) method using phosphine as source. Near infrared absorption mapping was carried out on longitudinal cuts of the SiC crystals in order to verify phosphorous doping. The phosphorous concentration determined by the way of glow discharge mass spectroscopy (GDMS) measurements was up to N-D = 1.8 (.) 10(17)cm(-3).