Electron cyclotron resonance (ECR) dry etching of 3C-SiC with different fluorinated gases, namely, sulfurhexafluoride (SF6) and tetrafluoromethane (CF4), was carried out. The influence of the gas flow, the etch gases and the applied bias voltages on the etch rate was studied. The maximum etch rates in the case of SF6 achieved were 1570 Angstrom/min and 260 Angstrom/min for Si and 3C-SiC, respectively. In the case of CF4 the 260 Angstrom/min (Si) and 160 Angstrom/min (3C-SiC) were obtained. Furthermore, we investigate the selectivity of this dry etching process of SiC against Si. The residue free surface conditions were determined with Auger electron spectroscopy.