Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+) implantation, the addition of a thin Ti layer, and a novel two-step implant activation anneal process. The component structure of the metallization studied was Ti/AlNi/W. Specific contact resistivities in the range of 2 to 6 X 10(-5) ohm-cm(2) were reliably and repeatedly achieved after annealing at temperatures of 900-950degreesC for 2 minutes in a high purity argon atmosphere. Resistivities in the reported range were achieved by degenerately (>10(20) cm(-3)) doping the surface region of lightly p-type 4H-SiC epilayers via low energy Al+ implantation. A high acceptor activation fraction was achieved by annealing the samples with a 1400+1650degreesC two-step sequence in an Ar atmosphere. It was also discovered that significantly improved SiC surface morphologies could be achieved by capping implanted samples with high density graphite during the activation anneals. AFM average roughness values improved by 10X compared to samples capped with SiC. The metallurgical morphology and contact resistivity remained intact even after annealing at 1050 C, indicating good thermal stability. The results of Ti/AlNi/W contacts on implanted layers were compared to Ni2Si and AlTi intermetallics and were found to be comparable to or superior in terms of specific contact resistivity, uniformity, and thermal stability.