Aluminium Schottky contacts to n- and p-type SiC were fabricated by diffusion welding. Forward current-voltage measurements were made in a temperature range of 300divided by773degreesK. The basic Schottky parameters, such as saturation current (J(S)), barrier height (Phi(B)), the ideality factor (eta), the effective Richardson's constant (A**) and the series on-resistance (R-sp) were obtained from U-I curves at different temperatures. The comparative analysis of temperature variations of these parameters is presented.