On 6H-SiC implanted with nitrogen, VLLI (Visible Light Laser Irradiation) at 532 rim is shown to result in a significant reduction of the damage level. The crystal recovery is never complete but can reach approximate to50-60% of the initial value. This is not sufficient to achieve a significant activation of the implanted species, but may be used to lower the constraints of high temperature ion-implantation or, after implantation, to reduce the thermal budget necessitated by the usual high temperature (or high energy laser) activation steps. To be fully optimised, the process has to take into account the change in optical properties of the implanted layer as the recovery proceeds.