We identify several promising approaches to PiN diode fabrication, which greatly reduce forward voltage (V-f) drift in PiN diodes fabricated on standard 8degrees off-axis 4H-SiC substrates. Our best results require thick buffer layers and growing the entirety of the active device structure without interruption. We address the roles of buffer and drift layer thickness, continuous growth, processing variations and alternative substrate preparation, including (11 (2) over bar0) substrates, on Vf drift. Lastly we report on progress made to reduce the density of stacking fault nucleation sites in PiN diodes.