An initial report on an investigation of the interface between sacrificial silicon dioxide on SiC and a conventional thermally grown silicon dioxide layer on SiC is presented. The ellipsometry technique is used as a key tool in evaluating the quality and structure of the interface formed. Three samples from the same n-type 4H-SiC wafer were prepared using two different oxide growth techniques. The first technique was the oxidation of a thin sacrificial silicon layer which was deposited on an atomically cleaned surface in UHV conditions. The thin silicon layer was sacrificially oxidized in a wet oxidation ambient inside a furnace at 950degreesC, followed by a re-oxidation annealing treatment at the same temperature in order to densify the grown oxide and terminate the dangling bonds at the SiO2/SiC interface. The second sample was prepared using a conventional thermal dry oxidation in a furnace at 1100degreesC, followed by a re-oxidation annealing treatment at 1100degreesC. A third sample was used as a reference sample in the ellipsometry study. A spectroscopic ellipsometer was used to examine the interface between the oxide and the SiC. Data were fitted to a four phase optical model. The analysis indicates a much more abrupt interface and higher quality oxide material from the sacrificial silicon oxidation process compared to the conventional thermal dry oxidation method.