Magnesium oxide (MgO) thin films have been studied as an alternative dielectric to silicon dioxide (SiO2) for SiC insulation applications. Thin MgO films have been deposited onto Pt/Si substrate, using sol-gel coating process. Theta-2theta X-ray diffraction patterns of the films show a [I I I] preferential orientation. MIM structures have been elaborated to characterize the electrical properties of the sol-gel MgO films. Current-Voltage characteristics of these structures have been measured between 150degreesC and 250degreesC. The first IN curves show two conduction regimes: an ohmic-like regime at low electrical fields (E<0.3MV/cm), and a Schottky-type regime at higher electrical fields (E>0.3MV/cm). Zero-field potential barrier heights of the order of I eV have been estimated.