High current MOS-trench vertical JFETs (4H-SiC) with a blocking voltage of 600V and a low specific on-resistance of 2.86mOmega-cm(2) has been demonstrated successfully. This paper describes the static and dynamic characterization of 600V, 20A SiC MOS-enhanced JFET designed and fabricated at Rockwell Scientific. A standard double pulse test circuit with an inductive load is used for the dynamic characterization. An in-house designed and fabricated gate drive is used to drive the normally-on JFETs. The power loss and related voltage and current stresses of the SiC MOS-enhanced JFETs are measured and reported.