Materials Science Forum, Vol.457-460, 1451-1456, 2004
Advanced processing techniques for silicon carbide MEMS and NEMS
Due to its exceptional electrical, mechanical, and chemical properties, SiC is currently receiving attention as an alternative to Si for use in micro- and nanoelectromechanical systems (MEMS and NEMS). This paper reviews several key achievements that have significantly advanced the development of SiC MEMS and NEMS. These include AP- and LPCVD processes for MEMS-suitable polycrystalline 3C-SiC, alternatives to reactive ion etching for multilayer poly-SiC surface micromachining, and fabrication techniques for single crystalline 3C-SiC nanomechanical resonators with fundamental resonant frequencies in the GHz range.