Using pulsed laser deposition we prepared Fe-x-C1-x films on Si (100) substrates. Weshow that the lightly Fe-doped amorphous carbon films on Si substrate have large MR at room temperature. At T = 300K and B = 5T a large positive MR of 138% was found in Fe-0.011-C-0.989 film. Furthermore,we find that when temperature T < 258K, the MR of Fe0.011-C0.989 film on Si substrate is negative and when 258K < T < 340K the MR is positive. Besides, the resistance of the material is controlled by the measuring current and therefore its IN curve is unusual asymmetric. The current-controlled electric transport properties have a potential to achieve higher density magnetic random access memory (MRAM).