By using radio frequency magnetron reactive sputtering system, (002)-oriented AlN film was deposited on W tip. The field emission from (002)-oriented AlN film on W tip was studied and compared with that from the bare W tip in a high vacuum (<= 10(-6) Pa) chamber. It indicated that the enhanced electron emission could be obtained from the (002)-oriented AlN film on W tip. The corresponding Fowler-Nordheim plot of AlN presented a nonlinear behavior in nature related the high resistivity of AlN. Furthermore, the current-electric field (I-E) curve presented excellent reproducibility checked by repeated measurements.