The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties - better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity - should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.