For preliminary step toward fabrication of MOSFET using 4H-SiC (03(3) over bar 8) prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC (03(3) over bar 8) and (03(38) over bar) substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC (03(3) over bar 8) and (03(38) over bar )plane. Growth rate of epilayers of 4H-SiC (0001), (03(3) over bar 8) and (03(38) over bar) face were same. Oxidation rate of 4H-SiC (0001), (000(1) over bar), (03(3) over bar 8) and (03(38) over bar) face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of (03(3) over bar 8) and (03(38) over bar) is mainly due to the difference of polarity similar to the case of reported for (0001) and (000(1) over bar).