Thick (111) oriented beta-SiC layers have been grown by hetero-epitaxy on a (0001) alpha-SiC substrate with the Continuous Feed-Physical Vapour Transport (CF-PVT) method. The growth rate was 68 mu m/h at a pressure of 2 torr and a temperature of 1950 degrees C. The nucleation step of the beta-SiC layer during the heating up of the process was studied in order to manage first the alpha to beta heteropolytypic transition and second the selection of the beta-SiC orientation. With a adapted seeding stage, we grew a 0.4mm thick layer almost free of Double Positioning Boundaries on a 30mm diameter sample. First observations of the layer by cross-polarised optical Microscopy are presented both in planar view and in cross section geometry.