We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900 ° C with a rate of 320 ° C/min in vacuum. Using this novel system, the annealing of N* implanted SiC samples (total dose: 2.4 x 10(15) cm(-2), thickness: 220 nm) at 1900 ° C for 0.5 min results in a low sheet resistance of 1.39 x 10(3) ohm/sq. with extremely low roughness of the surface (RMS value: 0.32 nm). It is also demonstrated that EBAS can anneal the sample with low electric power consumption.