We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC semi-insulating wafer. We used a full 35 mm wafers on which, after implantation and annealing, 77 reticules with Hall bars and TLM motifs were processed. We found an average sheet resistance of 531 &UOmega;/square with 30 &UOmega;/square standard deviation.