In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm(2)/Vs to 100 cm(2)/Vs. Finally, we show that the "Normally-off" accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 M&UOmega; cm(2)) and that the 3 x 3 mm(2) accumulation MOSFET operates over 10 A and its on-resistance is 19 m&UOmega; cm(2).