We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm(2)/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm(2)/VS. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.