4H-SiC vertical depletion-mode trench JFETs were fabricated, packaged, and then irradiated with either 6.8 Mrad gamma from a Co-60 source, a 9x10(11) cm(-2) dose of 4 MeV protons, or a 5x10(13) cm(-2) dose of 63 MeV protons. 4H-SiC Schottky diodes were also fabricated, packaged and exposed to the same irradiations. The trench VJFETs have a nominal blocking voltage of 600 V and a forward current rating of 2 A prior to irradiation. On-state and blocking IN characteristics were measured after irradiation and compared to the pre-irradiation performance. Devices irradiated with 4 MeV proton and gamma radiation showed a slight increase in on resistance and a decrease in leakage current in blocking mode. Devices irradiated with 63 MeV protons, however, showed a dramatic decrease in forward current. DLTS measurements were performed, and the results of these measurements will be discussed as well.