1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 2 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm(2), at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm(2) was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275° C. In addition, an integrated Darlington pair with an active area of 3 rum x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.