Materials Science Forum, Vol.483, 981-984, 2005
Demonstration of high-power X-band oscillation in p(+)/n(-)/n(+) 4H-SiC IMPATT diodes with guard-ring termination
We fabricated a p(+)/n(-)/n(+) 4H-SiC IMPATT diode with guard-ring termination. The p(+) - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.