This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He+ ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0x10(15)/cm(2)) and the thickness of the drift layer (16.5 μ m). He+ ion implantation was performed with the energy and the dose of 400kV and 1.0x10(13)-2.0x10(14)/cm(2), respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current (< 10μ [email protected]) between the PiN diodes with/without He+ ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He+ ion implantation.