In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti - Al - TiBx - Au and TiBx contact systems. The n-GaN epitaxial layers of I pm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x10(18) cm(3). The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.