The present paper reports on a simulation study carried out to determine and optimize the effect of the high-low junction emitter (n(+)-n) on thin silicon solar cell performance. The optimum conditions for the thickness and doping level of the front surface layer with a Gaussian profile were optimized using analytical solutions for a one dimensional model that takes on the theory relevant for highly doped regions into account. The photovoltaic parameters of silicon solar cells with front surface field layer (n(+)-n-p structure) and those of the conventional one (n-p structure) are compared. The results indicate that the most important role played by the front surface field layer is to enhance the collection of light-generated free carriers, which improves the efficiency of the short wavelength quantum. This is achieved by a drastic reduction in the effective recombination at the emitter upper boundary, a property primarily responsible for the decrease in the emitter dark current density. The findings also indicate that the solar cell maximum efficiency increase by about 2.38% when the surface doping level of the n(+)-region and its thickness are equal to 2.10(20) cm(-3) and 0.07 mu m, respectively. (C) 2010 Elsevier Ltd. All rights reserved.