In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrodinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. (C) 2011 Elsevier Ltd. All rights reserved.