In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behaviour by highlighting the features of the I-V and C-V characteristics, as well as the electrostatic potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes. (C) 2011 Elsevier Ltd. All rights reserved.