The breakdown voltage statistics of Al2O3/HfO2 nanolaminate multilayer dielectrics fabricated by atomic layer deposition (ALD) are modeled within the percolation theory. Moreover, the nanolaminate breakdown properties are predicted from the breakdown statistics of the separate materials, thus providing a reliable breakdown design framework for nanolaminates. Comparison with experimental data suggests that the electric field in each of the dielectric layers, rather than the total gate voltage, is the variable that controls the breakdown statistics. (C) 2011 Elsevier Ltd. All rights reserved.