In this paper, an original termination, the etched guard ring assisted junction termination extension (JTE), is demonstrated on 4H-SiC light triggered thyristors. The termination structure, designed with finite element simulations, is detailed and particular attention is paid to the sensitivity to etching depth uncertainties. The fabrication processes and the electrical characterization of the devices are described. A blocking voltage of 6.3 kV is attained, validating the principle of the termination. Switching and quasi static on-state measurements are also performed to investigate the functionality of the thyristors. (C) 2012 Elsevier Ltd. All rights reserved.