CMOS compatible self-aligned access regions for indium gallium arsenide (In0.53Ga0.47As) implant-free n-type metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated. In situ doped n+ source/drain regions are selectively grown by metal-organic vapor phase epitaxy and self-aligned Nickel-InGaAs alloyed metal contacts are obtained using a self-aligned silicide-like process, where different process conditions are studied. Soft pre-epitaxy cleaning is followed by X-ray photoelectron spectroscopy, while the Ni-InGaAs/III-V interface is characterized by back-side SIMS profiling. Relevant contact and sheet resistances are measured and integration issues are highlighted. Gate-first implant-free self-aligned n-MOSFETs are produced to quantify the impact of Ni-InGaAs contacts on the device performance. (c) 2012 Elsevier Ltd. All rights reserved.