A single-pole-double-throw transmit/receive switch using a shunt p-n diode and shunt NMOS transistors in 130-nm CMOS technology that operates around 60 GHz is reported. The switch exhibits insertion loss of similar to 2 and 3 dB for TX and RX mode, respectively at 60 GHz. The diode has similar to 6X lower parasitic capacitance for given on resistance compared to NMOS transistors in the CMOS technology, which results in lower insertion loss. Furthermore, the p-n diode has greater than 11-V breakdown voltage, which enables the switch to attain higher than 18-dBm measured input 1-dB compression point. This is the highest among CMOS millimeter-wave switches reported up to date. Transmit to receive port isolation of the switch is similar to 20 dB at 60 GHz. (C) 2012 Elsevier Ltd. All rights reserved.