This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance. (C) 2012 Elsevier Ltd. All rights reserved.