This paper presents a combined pulsed I(V)-pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of ill parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented. (C) 2013 Elsevier Ltd. All rights reserved.