InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n(++) InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of similar to 250 Omega mu m, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500 nm and equivalent oxide thickness (EOT) of 3 nm has an on-state/off-state current ratio of similar to 10(5) and peak extrinsic transconductance of 255 mu S/mu m at drain voltage of 0.5 V. To further reduce EOT, atomic-layer-deposited HfO2/Al2O3 high-k dielectric was integrated in InGaAs FinFETs. Good interface quality and small EOT of similar to 1 nm were achieved. Forming gas annealing (FGA) was used for drive current enhancement. A 300 degrees C 30 min FGA leads to similar to 48% increase in drive current as well as significant reduction of subthreshold swing, probably due to an improvement of the HfO2/Al2O3/InGaAs interface quality. (C) 2013 Elsevier Ltd. All rights reserved.