In this paper, the reliability issues of the lateral insulator gate bipolar transistor based on SOI substrate (SOI-LIGBT), including the anode punch-through, the terminal early breakdown, the hot-carrier degradation and the latch-up failure, have been experimentally investigated and improved. The measurement results and the T-CAD simulations demonstrate that the proposed device owns higher reliability, which can be applied well as the output driver device of the power ICs. (C) 2013 Elsevier Ltd. All rights reserved.