This paper presents a Monte-Carlo method based on the distribution of the time between successive tunnel events in resistively coupled nanoscale tunnel junctions. The frequency dependent Fano factor is computed for this structure and it is shown that the zero-frequency factor decreases with increasing coupling resistance. Studying the dependence of the Fano factor on the applied voltage has revealed an optimum bias value at similar to 2.5e/C-5e/C. This technique could be further developed to investigate complex single-electron tunnelling (SET) structures with resistive elements. (C) 2013 Elsevier Ltd. All rights reserved.