A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved.