We have investigated the strain effects on the effective channel mobility of InGaAs pseudo (Psi) n-MOSFETs by means of mechanical beam bending technique. For this goal, III-V heterostructures were grown on InP and transferred onto Si by direct wafer bonding. We show that an increase in electron mobility of up to 70% can be achieved under tensile strain. Simulations of InGaAs band-structure parameters under strain suggest that in the present case mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass. (C) 2014 Elsevier Ltd. All rights reserved.